InGaAs image sensor RL01K1/RL5122-H1S00

SWIRshort-wave infraredlinear

Overview The RL01K1 / RL5122-H1S00 short-wave infrared (SWIR) linear array detector uses advanced InGaAs sensor technology and is available in two formats: 1024×1 with 12.5μm pixel pitch and 512×2 with 25μm pixel pitch. It delivers spectral sensitivity from 0.9 μm to 1.7 μm, is housed in a metal-ceramic hermetic package with an integrated single-stage TEC, and is designed for high-speed, low-noise industrial imaging and spectral detection applications.

Key Features

• Pixel Pitch: 12.5μm / 25μm
• Array Formats: 1024×1 / 512×2
• Spectral Range: 0.9–1.7 μm
• Maximum Line Rate: 36 kHz
• Minimum Integration Time: 15 μs
• Readout Modes: ITR, IWR
• Low Readout Noise: ~50 e (typ.) at 1–36 kHz, 20°C

Applications

• Material identification and sorting for resource recycling
• Agricultural product sorting and quality control
• Photovoltaic cell inspection and process monitoring
• Machine vision for defect detection and industrial process control

Specifications

• Model: RL01K1 / RL5122-H1S00
• Sensor: InGaAs
• Spectral Response Range: 0.9 μm – 1.7 μm
• Quantum Efficiency: >70% (1.0 μm – 1.6 μm)
• Optical Fill Factor: 100%
• Pixel Pitch: 12.5 μm (RL01K1) / 25 μm (RL5122-H1S00)
• Linear Array Size: 1024×1 (RL01K1) / 512×2 (RL5122-H1S00)
• Effective Pixel Rate: ≥ 99.8%
• Maximum Output Line Frequency: 36 kHz
• Readout Mode: ITR, IWR
• Minimum Integration Time: 15 μs
• Readout Noise (Typical): 50 e @ 1–36 kHz, 20°C
• Optional Gain: ≥ 4-level
• Average Pixel Dark Current: ≤ 100 ke/s @ 20°C (RL01K1) / ≤ 300 ke/s @ 20°C (RL5122-H1S00)
• Operating Power Consumption: ≤ 200 mW
• Output Signal Swing: 1.9 ± 0.1 V
• Dynamic Range: ≥ 58 dB
• Response Non-uniformity: ≤ 5% (non-corrected)
• Packaging: Metal-ceramic integrated hermetic package with built-in single-stage TEC
• Outline Dimensions: 25.5 × 17.7 × 7.0 mm³ (excluding pin size)
• Device Weight: ~8 g
• Operating Case Temperature: -40°C – +60°C
• Storage Case Temperature: -45°C – +70°C