Plate glass

Outline
Three-dimensional wafer-level packaging (WLP) using through-glass vias (TGV) enables semiconductor miniaturization and improved high-frequency performance with metal interconnects.

Features

• Anodic bonding to silicon wafers available
• Non-adhesive process eliminates out-gassing issues
• High-frequency performance suitable for RF applications
• Low stray capacitance compared with TSV
• Low inductance
• Low electrical resistance due to metal rod vias

Suitable for WL-CSP MEMS packaging

• Fine via pitch tolerance
• Consecutive pitch ≤ ±20 μm on φ200 mm wafers
• Consecutive via pitch ≤ ±20 μm
• Available up to φ200 mm wafers

End user market / Applications

• AV / Mobile: RF switches and relays for smartphones, portable devices, digital cameras, car navigation; pressure sensors; gyroscopes; accelerometers; image sensors
• Automotive: Pressure sensors; accelerometers; gyroscopes
• Semiconductors: RF‑MEMS switches; image sensors
• Biotechnology / Medical: Pressure sensors for medical devices

Technical specifications

• Material: Borofloat 33, SW-YY
• Glass size: ≤ φ200 mm
• Minimum thickness: 0.3 mm
• Minimum via diameter: φ0.15 mm
• Hole size tolerance: ±0.02 mm
• Maximum aspect ratio (depth:diameter): 1 : 5
• Via material: Si, W (tungsten)
• Via hermeticity (He leak test): 1×10^-9 Pa·m^3/s
• Via–glass gap (Standard): 0 μm–3.0 μm
• Via–glass gap (Option 1): 0 μm–1.0 μm
• Via–glass gap (Option 2): -3.0 μm–0 μm
• Via shape: Straight
• Cavity processing: Available
• Metallization: Available
• Bump processing: Available