OverviewAnodic bonding with a silicon wafer eliminates the need for adhesives and helps resolve out-gassing issues, enabling use in wafer-level packaging (WLP) processes.
Key features- Micro-hole processing: minimum hole diameter φ0.1mm
- Maximum glass size: up to φ300 mm (some processes limited to φ200 mm)
- Improved bonding yield: suppressed sagging around holes and minimized chipping (≤10 μm available)
Standard specifications- Material: glass
- Glass size: ≤ φ300 mm (*)
- Minimum thickness: 0.15 mm
- Thickness tolerance: ±0.01 mm
- Minimum hole size: φ0.1 mm
- Hole shape: upon request (straight / taper / step)
- Hole size tolerance: ±0.02 mm
- Chipping: ≤100 μm (special processing can reduce to ≤10 μm)
- Metallization: available
Sagging comparisonSharp edge typeSagging width: <10 μm
Sagging depth: <0.1 μm
Standard typeSagging width: >400 μm
Sagging depth: >0.7 μm
Chipping comparisonLess-chipping type(illustrated comparison available on product page)
Standard type(illustrated comparison available on product page)
End user markets / Applications- Automotive
- Pressure sensors
- Acceleration sensors
- Gyroscopes
- Semiconductors
- RF-MEMS switches
- Image sensors
Technical specifications- Material: glass
- Glass size: ≤ φ300 mm (some processes limited to φ200 mm)
- Minimum thickness: 0.15 mm
- Thickness tolerance: ±0.01 mm
- Minimum hole size: φ0.1 mm
- Hole size tolerance: ±0.02 mm
- Hole shape: straight / taper / step (on request)
- Chipping: ≤100 μm (special processing available to achieve ≤10 μm)
- Cross-section shape: straight / taper / step
- Metallization: available
- Compatible with anodic bonding to silicon wafers for WLP