HAMAMATSU InGaAs photodiodes

- Active area G15553-003C: φ0.3 mm - Miniature package: 2 × 2 × 1 mm - Precise chip position tolerance: ±0.075 mm The chip of this product is not sealed and is exposed. Parts such as electrodes on the chip are not protected by an ...

Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability - High-speed response - ...

We have arranged the photodiode and lens in the optimal positions so that this receptacle type InGaAs PIN photodiode has significantly reduced multiple reflections inside the module. ...

Integrates photodiode for precision photometry with low-noise amp [Photosensitive area: 2.4 × 2.4 mm (Si), φ1 mm (InGaAs), built-in Two-color detector] The C10439 series photodiode modules ...

InGaAs APD that greatly reduces dark current This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved ...

The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET (synchronous optical network), G-PON (gigabit-capable passive optical network) ...