Insulated Gate Bi-polar Transistors - Capsule Types
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link) and 4.5kV (2.8kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
These devices are based on a state of the art punch through (PT) process, which yields exceptional values VCE(sat) and quiet switching behavior despite the high voltage ratings, yet the devices feature a positive temperature coefficient making them suitable for reliable parallel operation. Devices available with or without integral anti-parallel diode � a range of complimentary extra fast recovery diodes optimised for use with these IGBTs are available now with more based on exciting new technologies coming soon, please contact your representative for more information