OverviewThe LEYBOLD OPTICS IBT 800 (IBT series) is an ion‑beam wafer processing system designed for precise flattening, feature trimming and controlled material removal on semiconductor and RF substrates. It combines automated handling, batch processing and a double load lock to support high throughput production and laboratory applications.
Key benefits- Ion‑beam expertise: Mature ion‑beam technology adapted for semiconductor and RF applications.
- High productivity: Automated robot handling, batch substrate carriers and a double load lock increase wafer throughput and reduce cycle times.
- Integrated metrology: Optional OTFP spectrometer enables in‑line measurement of dielectric thin‑film thickness before and after processing.
Applications- RF connectivity: Feature trimming and bulk removal for SAW/BAW filters, frequency tuning and surface treatment of piezoelectric materials (LiNbO3, LiTaO3), oxide trimming (SiO2) for TC‑SAW and nitride thickness adjustment (Si3N4).
- Wafer bonding and planarization: Surface smoothing and thin‑film thickness adjustment where CMP is insufficient to prepare wafers for wafer‑to‑wafer bonding.
Highlight features- Ion sources & ISERM: Supports RF80 (80 mm) and RF40 (40 mm) ion sources. ISERM provides in‑situ etch‑rate determination within seconds without breaking vacuum.
- Batch process / substrate carriers: Processes wafer batches in cassettes on roller conveyors; carriers available for 2×12", 3×8", 4×6" or 8×4" wafers (other configurations on request).
- Automated robot handling (ISO5): Clean‑room‑compatible robot system for automatic loading/unloading between carriers and cassettes to minimise operator interaction.
- Integrated metrology — OTFP: Spectrometer measurement range λ 200–1100 nm; thickness range 50 nm – 50 µm for semi‑transparent films and semiconductor layers.
- Double load lock: Two vertical slots with motorised lift for parallel cassette handling to reduce operation time.
Key topics / Additional information- Center of Competence Leipzig: Development and support centre for ion beam figuring and trimming technologies.
- Product ecosystem & partnerships: Strategic alliances support RF connectivity and semiconductor process integration.
Technical specifications- Model shown: IBT 800 (IBT series)
- Ion sources supported: RF80 (80 mm) and RF40 (40 mm)
- Removal rate (indicative): up to 0.6 mm3/cm (RF80); up to 0.15 mm3/cm (RF40)
- In‑situ etch rate monitoring: ISERM — seconds‑scale etch‑rate determination without breaking vacuum
- Integrated metrology (OTFP): spectrometer λ 200–1100 nm; thickness range 50 nm – 50 µm
- Batch carriers: up to 2×12", 3×8", 4×6" or 8×4" wafers per carrier (others on request)
- Automated handling: clean‑room compatible robot system (ISO5)
- Load locks: double load lock with two vertical slots and motorised lift for substrate cassettes