Infrared photovoltaic detector P17442-011MS

InAsSb

Overview
The P17442-011MS is an InAsSb photovoltaic infrared detector optimized for sensitivity up to the 5 µm spectral band. Sensitivity is improved through specialized crystal growth and a back-illuminated structure, delivering a better temperature coefficient versus front-illuminated types. The photosensitive area is enlarged relative to the P16112/P16612 series to increase output signal. The device is RoHS compliant (no lead, mercury, or cadmium).

Key positioning
High-sensitivity, high-speed single-element IR detector (up to 5 µm). Larger photosensitive area for increased output compared with previous series.

Features

• High sensitivity in the mid-wave IR band
• Fast response time suitable for high-speed detection
• RoHS compliant (lead-, mercury-, cadmium-free)

Important product notes

• Back-illuminated structure improves temperature coefficient of sensitivity.
• Enlarged photosensitive area vs. P16112/P16612 series for higher output signal.
• Environmentally friendly construction: no lead, mercury, or cadmium used.

Spectral / performance highlights (text)

• Typical peak sensitivity wavelength: 4.1 µm
• Typical cutoff wavelength: 5.3 µm

Technical specifications

• Number of elements: 1
• Photosensitive area: 1 × 1 mm
• Package: Metal
• Package category: TO-5
• Cooling: Non-cooled
• Peak sensitivity wavelength (typ.): 4.1 µm
• Cutoff wavelength (typ.): 5.3 µm
• Photosensitivity (typ.): 65 mA/W
• Detectivity D* (typ.): 1.0 × 10^9 cm·Hz^1/2/W
• Noise equivalent power (typ.): 1.0 × 10^-10 W/Hz^1/2
• Rise time (typ.): 15 ns
• Terminal capacitance (typ.): 100 pF
• Measurement condition: Ta = 25 °C, Detectivity D*: λ = λp, fc = 1200 Hz, Δf = 1 Hz