- Extreme Performance Testing: 3-Terminal Power Transistor Socket
When evaluating SiC/GaN power devices, securing reliability and precision under high-current and high-temperature conditions is non-negotiable.
Our 3-Terminal Power Transistor Test Socket was engineered precisely to address this challenge. It provides a robust, high-performance solution for testing discrete semiconductors like power transistors and thyristors.
- Why Choose Our High-Performance Socket?
1. Next-Generation Device Ready
The socket is fully optimized for evaluating Through-Hole Mounted SiC/GaN MOSFETs. It ensures you can accurately measure the true characteristics of these next-generation, high-efficiency devices.
2. Robust Performance in Harsh Environments
* High Current: Handles up to DC 50A (at 25°C), allowing for realistic testing under operating conditions.
* High Temperature: Engineered for durability up to 250°C max. It's built to withstand crucial reliability tests like HTRB (High-Temperature Reverse Bias).
3. Guaranteed Measurement Accuracy
Kelvin Connection support is standard. This feature eliminates the influence of lead resistance and voltage drop during high-current flow, ensuring you measure the device's actual voltage with high fidelity. This is critical for capturing subtle performance characteristics.
- Broad Compatibility
The socket supports common 3-terminal packages, including TO-247, TO-3P, TO-254, and TO-220.
Don't risk your valuable devices and critical evaluation data on inadequate test solutions. This high-performance socket will significantly elevate the quality of your R&D and reliability testing.
Contact us for detailed specifications and technical documentation.