The Candela® 8420 surface defect inspection system uses multi-channel detection and rule-based defect binning to provide particle and scratch detection on opaque, translucent and transparent wafers such as Gallium Arsenide (GaAs), Indium Phosphide (InP), Lithium Tantalate, Lithium Niobate, glass, sapphire and other compound semiconductor materials. This surface defect inspection system employs proprietary OSA (optical surface analyzer) architecture to simultaneously measure scatter intensity, topographic variations, surface reflectivity and phase shift for automatic detection and classification of a broad range of defects of interest (DOI). Full-surface coverage is achieved in minutes, with the Candela 8420 surface defect inspection system to produce high resolution imaging and automated inspection reporting with defect classification and wafer maps. This tool offers improved sensitivity over single channel technologies.
The Candela CS20R configuration uses optics that are optimized to inspect compound semiconductor materials, including photosensitive films.
Substrate quality control, substrate vendor comparison, incoming wafer quality control (IQC), outgoing wafer quality control (IQC), CMP (chemical mechanical process) / polishing process control, wafer clean process control, epitaxy process control, substrate to epitaxy correlation, epitaxy reactor vendor comparison, process tool monitoring.
Detects surface defects on opaque, translucent, and transparent compound semiconductor materials up to 200mm in diameter
Manual mode supports scanning of partial wafers
Supports a wide range of wafer thickness