InGaAs photodiode array XSJ-10-MA-100-KB8

PINchip

This InGaAs/InP 1X8 Array monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ100μm, and high responsivity in the wavelength region from 900nm to 1650nm. Mainly application in monitoring the optical power. 1. Bottom-illuminated: @100um active area. 2. 1X8 array, die pitch: 300um. 3. High responsibility. 4. Low dark current. 5. Anode and cathode on top, eutectic soldering. 6. -40°C to 90°C operation range. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. 100% testing and inspection. 9. Customized chip dimension is available. 10. RoHS2.0 (2011/65/EU) compliant. Applications 1. Monitoring the optical power.