Photodiode array XSJ-10-MA-100-KB2

Description This InGaAs/InP 1X2 Array monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ100μm, and high responsivity in the wavelength region from 980nm to 1620nm.Mainly application in monitoring the optical power. Features Planar structure on SI InP substrate. Bottom-illuminated: Φ100μm active area. 1X2 array, die pitch: 500μm. High responsibility. Low dark current. Anode and cathode on top, wire bond on front. -40℃ to 85℃ operation range. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Customized chip dimension is available. RoHS2.0 (2011/65/EU) compliant. Applications Monitoring the optical power