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Wire cutting machine GC-800XC
for monocrystalline siliconwaferwith control software

Wire cutting machine - GC-800XC - Qingdao Gaoce Technology Co., Ltd. - for monocrystalline silicon / wafer / with control software
Wire cutting machine - GC-800XC - Qingdao Gaoce Technology Co., Ltd. - for monocrystalline silicon / wafer / with control software
Wire cutting machine - GC-800XC - Qingdao Gaoce Technology Co., Ltd. - for monocrystalline silicon / wafer / with control software - image - 2
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Characteristics

Technology
wire
Material
for monocrystalline silicon
Product handled
wafer
Control type
with control software
Applications
for microelectronics manufacturing
Other characteristics
automatic, high-precision, high-efficiency
X travel

Max.: 455 mm
(17.91 in)

Min.: 315 mm
(12.4 in)

Maximum cutting height

950 mm
(37.4 in)

Cutting speed

2,600 m/min

Overall length

5,110 mm
(201 in)

Maximum width

Max.: 230 mm
(9 in)

Min.: 166 mm
(7 in)

Height

3,275 mm
(129 in)

Weight

12,500 kg
(27,557.78 lb)

Description

Product introduction
This machine is designed for the slicing stage of crystalline silicon wafer manufacturing and was launched in November 2024. Its adjustable small-wheelbase design accommodates multiple wafer/rod formats (16X / 18X / 210 / 220 / 230 mm) and supports development trends for next-generation cells (HJT, TOPCon) such as larger sizes, thinner slices, half cells and rectangular wafers.

Key Features
The GC-800XC uses a renewed cutting-area layout with a maximum silicon ingot loading capacity of 950 mm. The cutting configuration enables multi-gear wheelbase modes across 315 mm – 370 mm – 400 mm – 455 mm at a wire speed up to 2600 m/min. A lightweight high-precision wiring system reduces tension fluctuation; whole-machine added tension is < 1 N and the comprehensive broken-line rate is < 5%. The machine supports stable cutting with wire diameters of 18 μm and below, offers low overall energy consumption and provides multiple automation interfaces for intelligent, data-driven production control.

Product Parameters
Size of silicon rod: □166 ~ □230 × LMax.950 mm (compatible with half wafer)
Maximum line speed: 2600 m/min
Wheelbase: 315 ~ 455 mm
Storage capacity (wire): 240 km
Equipment dimensions (approx.): 5110 × 2481 × 3275 mm
Equipment weight (approx.): 12,500 kg

Technical specifications
  • Model name: GC-800XC
  • Application: Slicing stage for crystalline silicon wafer manufacturing
  • Maximum ingot loading capacity: 950 mm
  • Supported wafer/rod sizes: □166 ~ □230; supports 16X/18X/210/220/230 mm and half wafer
  • Wire speed (maximum line speed): 2600 m/min
  • Wheelbase modes: multi-gear 315 mm – 370 mm – 400 mm – 455 mm
  • Whole-machine added tension: < 1 N
  • Comprehensive broken-line rate: < 5%
  • Wire diameter capability: stable cutting at 18 μm and below
  • Storage capacity (wire): 240 km
  • Equipment dimensions (approx.): 5110 × 2481 × 3275 mm
  • Equipment weight (approx.): 12,500 kg
  • Features: lightweight high-precision wiring system, low energy consumption, automation interfaces for intelligent production and data-driven control
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.