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PN junction diode module RFN5BGE3SSMDswitchingfast recovery
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Characteristics
- Technology
- PN junction
- Mounting
- SMD
- Function
- switching
- Technical characteristics
- fast recovery, silicon
- DC voltage
350 V
- Reverse voltage
350 V
Description
RFN5BGE3S is the silicon epitaxial planar type Fast Recovery Diode.
Low switching loss
High current overload capacity
Catalogs
Short Form Catalog
308 Pages
Exhibitions
Meet this supplier at the following exhibition(s):
Other ROHM Semiconductor products
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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