IGBT transistor RGA60TS65HR
insulated gate bipolar transistortrench IGBTfield stop IGBT

IGBT transistor - RGA60TS65HR - ROHM Semiconductor - insulated gate bipolar transistor / trench IGBT / field stop IGBT
IGBT transistor - RGA60TS65HR - ROHM Semiconductor - insulated gate bipolar transistor / trench IGBT / field stop IGBT
IGBT transistor - RGA60TS65HR - ROHM Semiconductor - insulated gate bipolar transistor / trench IGBT / field stop IGBT - image - 2
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Characteristics

Type
IGBT, insulated gate bipolar transistor, trench IGBT, field stop IGBT
Technology
power, switching
Other characteristics
silicon, for automotive applications
Current

34 A

Voltage

650 V

Description

Overview
RGA60TS65HR is a 4th-generation 650V field-stop trench IGBT optimized for automotive auxiliary systems and industrial inverters. The device structure and edge termination have been revised to increase current density while reducing conduction and switching losses, providing improved efficiency and reliability. It meets the AEC-Q101 automotive reliability standard and ensures a short-circuit withstand time of 7 μs at Tj = 25°C.

Product summary
Low switching-loss and low conduction-loss IGBT for electric compressors, HV heaters and industrial inverter applications, balancing low-loss performance with high short-circuit tolerance.

Applications
  • Automotive electric compressors
  • Automotive HV heaters (PTC heaters, coolant heaters)
  • Inverters for industrial equipment


Features
  • Qualified to AEC-Q101 (automotive grade)
  • Short-circuit withstand time (tsc): 7 μs
  • Low collector-emitter saturation voltage (low VCE(sat))
  • Reduced switching and conduction losses
  • Pb-free plating; RoHS compliant


Specifications
  • Part number: RGA60TS65HRC11
  • Series: A: For inverter (tsc 7-10 μs)
  • VCES (rated): 650 V
  • IC (100°C): 34 A
  • VCE(sat) (Typ.): 1.55 V
  • tf (Typ.): 82 ns
  • tsc (Min.): 7 μs
  • Pd: 170 W
  • BV(CES) (Min.): 650 V
  • Storage temperature: -55 °C to 175 °C
  • Package: TO-247N
  • Packing type: Tube
  • Unit quantity: 450
  • Minimum package quantity: 30
  • Package size: 21.0 x 16.0 mm (t = 5.2)
  • RoHS: Yes
  • Common standard: AEC-Q101 (Automotive Grade)


Packaging
Standard package: TO-247N. Shipping: tube packaging, standard quantity 450 units, minimum package 30 units. Refer to packaging and mechanical drawings for handling and thermal design.

Development background
While high-voltage traction inverters increasingly use SiC, 650V IGBTs remain common for lower-power auxiliary systems. This product was developed to meet demand for higher efficiency, smaller footprint and improved short-circuit tolerance in automotive and industrial auxiliary applications.

Catalogs

No catalogs are available for this product.

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Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information
    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
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