Optical alignment system

for wafersmeasurementhigh-accuracy

Overview
Simultaneously measures misalignment between front and back patterns after double-sided exposure and wafer misalignment after bonding using Top-Bottom measurement. Also measures alignment deviation after surface layer exposure using Top-Top measurement. Available in cassette-to-cassette and semi-automatic configurations.

Applications

• Semiconductor device manufacturing
• CMOS device process control
• Front-and-back patterning accuracy control for sensor device production

Key specifications

• Wafer size: Max φ12 inch
• Measurement repeatability: 10X → 0.2 μm / 3σ (Top-Bottom); 20X → 0.02 μm / 3σ (Top-Bottom)
• Screen measurement locations: 25 positions
• Recipe capacity: 2,000
• Throughput: Top-Top 100 wafers/hour (5-point measurement); Top-Bottom 100 wafers/hour
• Available configurations: cassette-to-cassette type, semi-auto type

Operation & integration

• Support for up to 2,000 measurement recipes and configurable measurement points
• Suitable for inline production lines (cassette-to-cassette) and standalone semi-automatic operation
• Measurement modes: Top-Top and Top-Bottom to cover surface and bonded-layer alignment checks