Chamber furnace SC-1600-III

crystal growthelectric resistanceinert gas

SCEC Third Generation Monocrystal ingot Puller: Low-oxygen Monocrystal ingot Puller can melt the silicon via the graphite heater in an inert atmosphere (Argon, Nitrogen) and then grow dislocation-free monocrystal silicon ingot through CZ method automatically. The unique oxygen content reduction solution of SCEC can effectively reduce the oxygen content in Mono-Si ingot by 40% and improve the efficiency of N-type 210 cells by 0.1%-0.2% The Crystal Growth Furnace is a piece of flexible shaft pulling type crystal growth equipment, which, in an inert atmosphere below atmospheric pressure, uses a graphite resistance heater to melt the silicon materials loaded in the quartz crucible, and grows high-quality, dislocation-free mono-Si ingots using the Czochralski method.The Low Oxygen Content Crystal Growth Furnace, designed to meet the low-oxygen requirements in the manufacturing process of N-type cells, achieves the effects of reducing oxygen content, increasing minority carrier lifetime, improving crystallization rate, and boosting daily output through technical means such as argon purging, hot zone process simulation, and software control algorithms, thereby effectively enhancing the efficiency of N-type cells. Fully automated process neck growth-crown growth-shoulder growth-body growth-tail growth Diameter control capability ≤±0.5mm Intelligent temperature control unique SCEC hot zone enables stable temp control Modular design user-friendly software control system has comprehensive functions and supports customized upgrade Labour cost saving intelligent crystal growth reduces human intervention