Automatic laser ablation system RM-LSR-9000

RM-LSR-9000 adopts selective laser local passivation technology to precisely suppress cut edge defects and edge carrier recombination. Under the premise of low-cost production line upgrades, the power of each module is stably increased by 6–10W. It is perfectly suitable for 182/210 large-size silicon wafers and the mass production of mainstream high-efficiency cells such as TOPCon and HJT, making it the core technical modification solution for improving quality and efficiency of PV cells at this stage. Capacity ≥9000UPH@182R Laser High-stability green picosecond laser Beam Optimized beam shaping design High Capacity, Low Damage, High Stability Simplified Process Simple process, easy to control, no line modification needed. Power Enhancement Module power gain ≥2W. Broad Compatibility With the development of 1/3-/1/4- cut cells, the efficiency shows an additive effect regardless of whether ALD edge passivation is applied: The laser process is compatible with both scenarios. Flexible Retrofitting Support retrofitting of existing PERC and TopCon.