Crucible for the semiconductor industry

ceramicfor high-temperature applicationsaluminium

Product overview
INNOVACERA’s Conductive Boron Nitride Crucibles are engineered for electron-beam and thermal evaporation processes in semiconductor and thin-film fabrication. With a conductive, low-wetting surface and high-purity composition, these crucibles protect substrates from contamination while enabling controlled evaporation of metals and ceramic materials. Suitable for alloy melting, rare-earth and ceramic sintering, and a wide range of coating applications.

Key properties and uses
These conductive boron nitride crucibles exhibit excellent high-temperature resistance and thermal shock performance. They are chemically stable relative to many metals and rare-earth ceramics and remain intact under rapid heating and cooling. Typical uses include electron-beam evaporation, thermal evaporation with induction or resistance heating, aluminum and silicon plating, and various thin-film deposition processes.

Benefits

• High purity and fine surface finish reduce contamination and improve film quality.
• Enhanced evaporation rates enable faster deposition and reduced cycle times.
• Improved thermal stability lowers power demands and increases process consistency.
• Extended service life reduces downtime and replacement frequency.

Advantages / Features

• Outstanding resistance to high temperatures and repeated heat cycling.
• Low thermal expansion and low wettability by most molten metals.
• Heat-resistant up to 2000℃; boron nitride is non-reactive with aluminum and shows no volatility.
• Higher evaporation rates: shorter process cycles and improved overall yields.
• Rapid material change capability minimizes chamber downtime and speeds production changeovers.
• Enhanced thermal stability ensures consistent, controllable evaporation behavior.

Technical specifications

• Main ingredients: BN + TiB2
• Density: 3.0 g/cm3
• Binding composition: B2O3
• Color: Grey
• Room temperature resistivity: 300-2000 Ω·cm
• Operating temperature: below 1800℃
• Thermal conductivity: > 40 W/m·K
• Coefficient of thermal expansion: (4-6) x 10⁻⁶ K⁻¹
• Bending strength: > 130 MPa
• Evaporation rate: 0.35-0.5 g/min·cm²