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Current: -16.4 A
Voltage: -60 V
... >
Applications & positioning
- Suitable for P-channel switching, load switching and board-level power management where a DPAK P-channel MOSFET is required.
Technical ...
Infineon Technologies AG
Current: 40 A
Voltage: 40 V
... Short description
BSZ063N04LS6 is a 40 V OptiMOS 6 power N-channel MOSFET designed for SMPS, battery chargers and ORing applications. It offers approximately 30% lower RDS(on) compared with the previous generation and is RoHS compliant.
Key ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 61 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 20 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 18 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 9 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG
Current: 101 A
Voltage: 600 V
... ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in ...
Infineon Technologies AG