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Voltage: 60 V
... NPN Epitaxial Silicon Transistor Applications This product is general usage and suitable for many different applications. ...
Onsemi
Current: 15 A
Voltage: 60 V - 120 V
... The Bipolar Power Transistor is designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters ...
Onsemi
Current: 15 A
Voltage: 60 V - 120 V
... The Bipolar Power Transistor is designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters ...
Onsemi
Current: 10 A
Voltage: 100 V
... The Bipolar Power Transistor is designed for general-purpose amplifier and switching applications, where mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features Isolated ...
Onsemi
Current: 800 A
Voltage: 1,200 V
... The NXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency ...
Onsemi
Current: 800 A
Voltage: 1,200 V
... The SNXH800H120L7QDSG is a rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency ...
Onsemi
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery ...
STMicroelectronics
Current: 30 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Low on-voltage drop (VCE(sat)) Short circuit withstand ...
STMicroelectronics
Current: 0.8 A
Voltage: 50 V
... DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE Sat. (V):0.7 VCEO ...
Voltage: 20, 50 V
... N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
Diodes Incorporated
Voltage: 11 V
... 3.2GHz unity gain for RF switching applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note ...
Diodes Incorporated
Voltage: 50, 60, 7 V
... The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching applications. MARKING ...