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Voltage: 1,700, 2,500, 4,500 V
... Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks ...
Current: 600 A
Voltage: 1,200 V
... Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio of IGBT ...
Current: -16.4 A
Voltage: -60 V
... P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity ...
Infineon Technologies AG
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
... Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low losses combined ...
Current: -0.5 A
Voltage: -50 V
... 50A02CH is Bipolar Transistor, Low VCE(sat), PNP Single for low frequency General-Purpose Amplifier Application. Applications Low-Frequency Amplifier High Speed Switching Small Motor Drive Muting Circuit Features High Collector Current ...
Onsemi
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits ...
STMicroelectronics
Voltage: 7.5 V
... UHF band handheld radio Output stage for 700-800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors ...
Current: 95 A
Voltage: 40 V
... RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; RoHS compliant Halogen Free ...
ROHM Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast) ...
SEMIKRON
Voltage: -400 V - 1,000 V
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and thermally advanced PowerPAK® families. Configuration ...
Voltage: 0.24 V - 3.5 V
... NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors. ...
Current: 5, 20, 30, 50 A
Voltage: 600 V
... The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop ...
Voltage: 110, 265 V
... TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System Cost, Higher Design Flexibility Multi-mode ...
Power Integrations
Current: 0.8 A
Voltage: 50 V
... DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE Sat. (V):0.7 VCEO ...
Voltage: 20, 50 V
... N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen ...
Diodes Incorporated
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
... Sockets for Power IC Standard type Single in Line ●How to order ex: PDSA-1076-Sxx-GG x:Number of positions 2 to 16 Dielectric Strength - Insulation Resistance - - Operating Temperature EX.) PDSA-1076-Sxx-GG x = Number of pins ...
JC CHERRY INC.
Voltage: 45 V
... The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING ...
Central Semiconductor
Current: 25 mA
Voltage: 20 V
... Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation Voltage - VcEsat ...
Diotec
Current: 2 A
Voltage: 36 V
... With this MOSFET, you can control a voltage of up to 36 Volts. With the pulse width modulation, the rootmean-square voltage can be lowered (f.e. to dim a LED light). COMPATIBLE WITH Arduino, Raspberry Pi, etc. CONTROL VOLTAGE min. 2V INTERFACES 2 ...
Current: 1 mA - 20 mA
Voltage: 2.7 V
Features Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at ...
Broadcom
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar Transistor) ...
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity. Avagos ...
Current: 10, 25 A
Voltage: 1,200 V
... Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate using DBC ...
Rongtech Industry (Shanghai) Inc.,
... Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - square Reverse ...
IXYS
Voltage: 8 V - 35 V
... Bluetooth Module is a transition module of data communication between mobile and genset. It is connected with genset controller via RS485. By mobile APP genset information can be obtained and genset start/stop can be controlled. PERFORMANCE AND CHARACTERISTICS Mobile ...
A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.
ApplicationsBipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.
TechnologiesBipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.
Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.
Choice will primarily depend on current and voltage specifications, frequency limits and packaging.
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