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Current: 25 mA - 1,000 mA
Galvanic separation of drive and power circuit Voltage resistance up to 8 kV Ignition current up to 3 A Turns ratio up to 3:1 Ignition currents : 0.1 to 3 A Rise time : 0.3 to 2.3 µs Frequency : ≤ 40000 Hz Attenuation performance ...
Current: 0.1 A - 3 A
Galvanic separation of drive and power circuit Voltage resistance up to 4 kV Ignition current up to 1 A Turns ratio up to 3:1:1 Ignition currents : 0.1 to 1 A Rise time : 0.4 to 4 µs Frequency : ≤ 40000 Hz Attenuation performance ...
Current: 1.7 A
Primary voltage: 2.3 V - 5.5 V
The SN6505x-Q1 is a low-noise, low-EMI push-pull transformer driver, specifically designed for small form factor, isolated power supplies. It drives low-profile, center-tapped transformers ...
Gate drive transformers for IGBT are the key element in the driver circuit supplying the necessary power for switching and maintaining safe galvanic separation between ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
... progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
... progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
DRIVE TRANSFORMERS FOR IGBT - INSULATION VOLTAGE 600 Vrms TO 2000 Vrms In recent years, power electronics have had a decisive influence on the technology of electrical energy generation, distribution ...
Vacuumschmelze GmbH & Co. KG
Electric power: 0 kVA
Primary voltage: 0 V
Secondary voltage: 0 V
Gate Drive Transformers for IGBT need to ensure excellent switching behavior as well as safe galvanic separation between high and low voltage side. In recent years it has become more ...
Vacuumschmelze GmbH & Co. KG
Current: 900 A
Electric power: 0 kVA
Primary voltage: 0 V
Gate Drive Transformers for IGBT need to ensure excellent switching behavior as well as safe galvanic separation between high and low voltage side. VACUUMSCHMELZE developed a new SMD ...
Vacuumschmelze GmbH & Co. KG
Main Features Compact Low profile SMD package Heritage in Space, Defense, Aviation RoHS or SnPb terminations Typical Applications SMPS Inverter Motor Drives
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