Digital microchip XSJ-10-D3-70-04

photodiodeInGaAsInP

This 2.5Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ70μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 2.5Gbps and below optical receiver and EPON ONU. 1. Φ70μm active area. 2. High responsibility. 3. Low dark current. 4. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 5. 100% testing and inspection. Applications 1. 2.5Gbps GPON/EPON ONU receiver. 2. EPON ONU.