PON microchip XSJ-10-APD5-50P-X

photodiode

This 10G avalanche photodiode chip (APD chip) is a kind of P electrode on top and N electrode in bottom structure, with top-illuminated active area size is Φ50μm. This product features high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 10G SONET/SDH and 10G PON optical receiver. 1. Φ50μm active area. 2. High multiplication. 3. Low temperature coefficient. 4. 100% testing and inspection. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. RoHS2.0 (2011/65/EU) compliant. Applications 1. 10G SONET/SDH. 2. 10G PON.