1. Metrology - Laboratory
  2. Optical Component
  3. InGaAs photodiode
  4. PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.

InGaAs photodiode XSJ-10-APD4-55-01
avalanchePIN

InGaAs photodiode
InGaAs photodiode
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Characteristics

Type
InGaAs, avalanche
Mounting
PIN

Description

Description Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, with top-illuminated active area size is Φ55μm for easy optical assembly; high responsivity, high multiplication factor and low dark current. The high-performance 2.5Gbps APD chip and TIA combined TO-CAN can improve the sensitivity of optical receiver, applications that enable data transmission for today’s fiber-to-the-home (FTTH). Features Φ55μm active area. Anode on top and cathode on back. Low dark current. Excellent responsivity and high gain. Data rate up to 2.5Gbps above. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications 2.5Gbps GPON/EPON ONU receiver.

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.