PON microchip XSJ-10-APD5-40
photodiode

PON microchip - XSJ-10-APD5-40 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - photodiode
PON microchip - XSJ-10-APD5-40 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - photodiode
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photodiode, PON

Description

This 10Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal-Ground (GSG) electrode structure, with top-illuminated active area size is Φ40μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 10G SONET/SDH and 10G PON optical receiver. 1. 40pm active area. 2. High multiplication. 3. High data rate. 4. Low temperature coefficient. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. 100% testing and inspection. Applications 10G SONET/SDH 10G PON

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