PON microchip XSJ-10-APD4-50G
photodiode

PON microchip - XSJ-10-APD4-50G - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - photodiode
PON microchip - XSJ-10-APD4-50G - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - photodiode
Add to favorites
Compare this product

Characteristics

Options
photodiode, PON

Description

Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, with top-illuminated active area size is Φ50μm for easy optical assembly; high responsivity, high multiplication factor and low dark current. The high-performance 2.5Gbps APD chip and TIA combined TO-CAN can improve the sensitivity of optical receiver, application in industrial temperature Passive Optical Network (PON) transmission. 1. Φ50μm active area. 2. Anode on top and cathode on back. 3. Low dark current. 4. Excellent responsivity and high gain. 5. Low dark current. 6. Data rate up to 2.5Gbps above. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. 100% testing and inspection. Applications 1. 2.5Gbps and below GPON/EPON I-temp. Optical Network Unit (ONU).

Catalogs

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.