Ceramic disk

aluminum nitrideinsulation

With its properties of electrical insulation and excellent thermal conductivity, Aluminum Nitride (AlN) Ceramics is ideal for applications where heat dissipation is required. In addition, since it offers a coefficient of thermal expansion (CTE) near that of silicon, and excellent plasma resistance, it is used for semiconductor processing equipment components.Good mechanical properties,Higher flexural strength than Al2O3 and BeO ceramics,High temperature and corrosion resistance.High thermal conductivity combined with good electrical insulation characteristics.Exceptional stability when exposed to many molten salts.Thermal stability up to at least 1500°CFavorable mechanical characteristics extending into the high temperature range.Low thermal expansion and resistance to thermal shock.Special optical and acoustic characteristics.PropertiesValueColor Dark GrayMain Content96%ALNBulk Density(g/cm3)3.335Water Absorption0.00Flexural Strength(MPa)382.70Dielectric Constant(1MHz)8.56Coefficient Linear Thermal Expansion(/℃，5℃/min, 20-300℃)2.805*10-6Thermal Conductivity(30 degree Celsius)>=170Chemical Durability(mg/cm2)0.97Thermal Shocking ResistanceNo cracksVolume Resistivity(Ω.cm) (20 degree Celsius)1.4*1014Dielectric Strength(KV/mm)18.45Surface roughness Ra(μm)0.3-0.5Camber(length ‰）<=2‰Ceramic Injection MoldingLow Pressure Injection MoldingCold Isostatic PressDry PressTape CastingPrecision Machining ProcessingAlN Ceramic Heat-sinks for high power systemAlN Crucible, Al evaporating dish and other high-temperature corrosion resistant parts.Direct Bond Copper Substrates (DBC)AlN Ceramic RodALN Ceramic WaferALN Ceramic SubstrateAlN Ceramic HeaterCustom ShapeComponents for semiconductor equipmentIC packagingThermal module substrateHigh power transistor module substrateHigh frequency device substrateExothermic insulation board for Thyristor ModulesSemiconductor laser, fixed substrate for light emitting diode （LED)Hybrid integrated module, ignition device moduleUsed in the sintering of structural ceramicsAlN Crucible for Metal Melting & Electronic cigarettesApplied to luminous materialsApplied to the substrate materialAluminum nitride (AlN) has a maximum direct bandgap width of 6.2eV, which has a higher photoelectric conversion efficiency than an indirect bandgap semiconductor. As an important blue and ultraviolet luminescent material, AlN is used in ULTRAVIOLET/deep ultraviolet light-emitting diodes, ultraviolet laser diodes, and ultraviolet detectors. In addition, AlN can form continuous solid solutions with group III nitride compounds such as GaN and InN, and its three or four element alloys can achieve continuous tunable band gap from visible band to deep ultraviolet band, making it an important high-performance luminescent material.AlN crystals are ideal substrates for GaN, AlGaN and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN has higher thermal matching and chemical compatibility with GaN and lower stress between substrate and epitaxial layer. Therefore, AlN crystal as GaN epitaxial substrate can greatly reduce the defect density in the device, improve the performance of the device, and has a good application prospect in the preparation of high temperature, high frequency, high power electronic devices.In addition, the substrate of AlGaN epitaxial material with AlN crystal as high Al component can effectively reduce the defect density in the nitride epitaxial layer, and greatly improve the performance and service life of nitride semiconductor devices.Regular Specification of ALN ceramic substrate:Length & Width: 25.4mm; 50.8mm; 63.5mm; 76.2mm; 101.6mm; 114.3mm; 127mm; 152.4mm.Thickness: 0.25mm; 0.5mm; 0.63mm;1mm;1.5mm; 2mm.Good mechanical propertiesHigher flexural strength than Al2O3 and BeO ceramicsHigh temperature and corrosion resistanceHigh thermal conductivity with good electrical insulationExceptional stability with molten saltsThermal stability up to 1500°CLow thermal expansion and resistance to thermal shockSpecial optical and acoustic characteristicsColor: Dark GrayMain Content: 96%ALNBulk Density: 3.335 g/cm³Water Absorption: 0.00Flexural Strength: 382.70 MPaDielectric Constant: 8.56 (1MHz)Coefficient Linear Thermal Expansion: 2.805*10^-6 (/℃, 5℃/min, 20-300℃)Thermal Conductivity: ≥170 (30°C)Chemical Durability: 0.97 mg/cm²Thermal Shocking Resistance: No cracksVolume Resistivity: 1.4*10^14 Ω.cm (20°C)Dielectric Strength: 18.45 KV/mmSurface roughness Ra: 0.3-0.5 μmCamber (length ‰): ≤2‰