Disks aluminum nitride

insulatinghigh thermal conductivity

Product Overview
Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch); most used are 6” aluminum nitride wafers and 8” AlN wafer substrates. AlN wafers can be produced in various thicknesses from 0.125 mm to 1 mm with polished or lapped sides. Customized sizes or requests are also available.
Aluminum Nitride (AlN) materials play an important role in the semiconductor industry; the similarity between its thermal profile and that of silicon makes it an ideal choice for wafer-related semiconductor applications. Innovacera’s AlN wafers provide high reliability for Si chips and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and very smooth surfaces (Ra ≤ 0.05 µm); Innovacera AlN wafer substrates can meet these requirements.

Features

• High melting point
• High electrical insulation
• Low dielectric constant
• Higher mechanical strength
• Superior corrosion resistance against molten metal
• Thermal and chemical stability
• High thermal conductivity (170-220 W/m·K)
• Similar coefficient of thermal expansion to that of silicon (Si)

Properties (material grades: AN170 / AN230 / AN99 / AN999)
Properties | Unit | AN170 | AN230 | AN99 | AN999
Color | – | Gray | Beige | Gray | Beige
Content of AlN | – | ≥95% | ≥96% | ≥99% | ≥99.9%
Bulk Density | g/cm3 | ≥3.30 | ≥3.28 | ≥3.26 | ≥3.25
Flexural Strength | MPa | ≥400 | ≥300 | ≥300 | ≥300
Compressive Strength | MPa | 2500 | 2000 | 2000 | 2000
Hv 500g | GPa | 10.5 | 9.0 | 9.0 | 9.0
Young’s Modulus | GPa | 300 | 300 | 280 | 280
Thermal Conductivity (@20°C) | W/m·K | ≥170 | ≥220 | ~100 | ~90
Specific Heat | KJ/(Kg·K) | 0.74 | 0.73 | 0.73 | 0.73
C.T.E (r.t.-400°C) | 10-6/K | 4.6 | 4.6 | 4.6 | 4.6
Volume Resistivity (20°C) | Ω·cm | ≥10^14 | ≥10^13 | ≥10^10 | ≥10^10
Dielectric Strength | KV/mm | ≥16 | ≥15 | ≥15 | ≥15
Dielectric Constant (@1MHz) | – | 8.6 | 8.6 | 8.6 | 8.6
Loss Tangent (@1MHz) | ×10^-4 | 5 | 5 | 5 | 5

AlN Wafers Specification (typical for 6″ and 8″)
Properties | Unit | 6″ Wafer | 8″ Wafer
Material | – | AlN Ceramics | AlN Ceramics
Thermal Conductivity | W/m·K | >170 | >170
Thermal Expansion Coefficient | ppm/K (300~1200K) | 4-6 | 4-6
Sintering Aid | – | Y2O3 | Y2O3
Diameter | mm | 150 ± 0.25 | 200 ± 0.25
Notch Depth | mm | 1.0 +0.25/-0 Locating Edge | 1.0 +0.25/-0
Notch Angle | – | 90° +5/-2° | 90° +5/-2°
Thickness | µm | 400 ± 15 | 400 ± 15
TTV | µm | <10 | <10
BOW | µm | <±30 | <±30
Warp | µm | <50 | <50
Ra (surface roughness) | nm | <50 | <50

Applications

• Semiconductor manufacturing
• Microwave power amplifiers
• RF power and switches
• High temperature power electronics
• Laser diode dispersion and optoelectronic devices
• High power and high frequency electronic devices
• MOSFET, IGBT power modules
• LED packages for cooling and protecting circuits

Technical specifications

• Standard diameters: 50.8 mm (2”) to 200 mm (8”), most common: 6” and 8”
• Thickness range: 0.125 mm to 1 mm (polished or lapped sides)
• Surface finish for direct wafer bonding: Ra ≤ 0.05 µm
• Typical thermal conductivity: 170–220 W/m·K (depending on grade)
• Coefficient of thermal expansion: ~4–6 ×10^-6/K (300–1200 K), similar to silicon
• Typical electrical volume resistivity at 20°C: up to ≥10^14 Ω·cm (grade-dependent)
• Dielectric constant (@1 MHz): ~8.6; Loss tangent: ~5×10^-4
• Mechanical: flexural strength typically ≥300–400 MPa; compressive strength ~2000 MPa or higher
• Typical wafer tolerances (example): diameter ±0.25 mm; thickness 400 ±15 µm for 6”/8” examples; TTV <10 µm; Bow <±30 µm; Warp <50 µm; Ra <50 nm
• Sintering aid commonly used: Y2O3