Ceramic substrate

aluminum nitridethin-layerthick-film

Overview
In today’s era of exploding AI computing power, 5G communication upgrades, and the transition of New Energy Vehicles (NEVs) toward 800V high voltage platforms, heat dissipation and packaging reliability have become core bottlenecks restricting system performance. Aluminum Nitride Ceramic Substrates, with their exceptional thermal conductivity, superior insulation properties, and a Coefficient of Thermal Expansion (CTE) highly matched to semiconductor materials, are used for high speed optical modules, RF devices and power semiconductors.

Product highlights
INNOVACERA provides precision ground AlN substrates with extreme surface flatness, supporting various metallization processes such as DPC (Direct Plated Copper) and AMB (Active Metal Brazing) to ensure stable operation in demanding environments.

Advantages
Feature — Technical Value
Ultra-High Thermal Conductivity — Thermal conductivity reaches 170–230 W/m·K, 7–10 times that of traditional Alumina ceramics, solving heat dissipation challenges at the source.
Matched CTE — CTE is approximately 4.5 ppm/°C, highly matched with Silicon (Si) and Gallium Nitride (GaN), significantly reducing thermal stress and enhancing packaging lifespan.
Superior Electrical Insulation — Features high volume resistivity and dielectric strength, ensuring electrical safety and signal integrity in high‑voltage and high‑frequency environments.
Leading Surface Technology — Typical roughness Ra ≤ 0.5 μm ensures high precision and yield for chip mounting, supporting complex circuit interconnections.

Product Specifications & Selection
We offer three standard specifications with a thickness of 1.0 mm; customization is available.
Model | Dimensions (L×W) | Recommended Applications | Selection Advice
Model A | 37 × 26 mm | IGBT modules, Automotive OBC, Large‑scale optical modules | Provides a larger effective cooling area, suitable for high‑power, complex packaging.
Model B | 35 × 22 mm | 800G/1.6T Optical Modules, RF Power Amplifiers (PA) | Mainstream market specification, balance of performance and cost with a mature supply chain.
Model C | 25 × 20 mm | Automotive LED, Industrial lighting, Small‑scale sub‑modules | High cost‑effectiveness, ideal for size‑constrained or cost‑sensitive scenarios.

Application

• High Speed Optical Modules (800G / 1.6T) — Addresses extreme heat flux density challenges up to 15–20 W/cm² in 1.6T modules; AlN substrate usage per module has increased under AI‑driven demand.
• RF & Microwave Communication (5G / Satellite) — Low dielectric loss (tanδ < 0.001) design optimized for high frequency signal transmission; provides cooling and support for GaN power transistors; used in 5G NR, mmWave and Satellite Ka‑band.
• New Energy Vehicles (Power Electronics / IGBT) — Suited for 800V platforms, providing high‑reliability insulation and cooling for SiC MOSFET and IGBT modules; meets thermal cycling, thermal shock and vibration requirements.
• High Power LED (Automotive Headlights / Industrial Curing) — Ideal for COB or multi‑chip integrated modules, effectively exporting heat to ensure high luminous efficiency and long lifespan; used in intelligent LED headlights, industrial UV curing and high‑end commercial lighting.

Metallization and Processing
Supports multiple metallization processes including DPC (Direct Plated Copper) for fine circuits, AMB (Active Metal Brazing) for high‑reliability power modules, and thick‑film or thin‑film metallization for customized electronic packaging.

Why Choose These AlN Substrates
High thermal conductivity, CTE compatibility with common semiconductors, superior electrical insulation and advanced surface flatness combine to improve thermal management, signal integrity and long‑term reliability for high‑performance electronic and photonic packages.

Technical Specifications

• Material: Aluminum Nitride (AlN) ceramic substrate
• Thermal conductivity: 170–230 W/m·K
• Coefficient of Thermal Expansion (CTE): approximately 4.5 ppm/°C
• Dielectric loss (typical): tanδ < 0.001 (optimized for high frequency use)
• Surface roughness: Typical Ra ≤ 0.5 μm
• Standard thickness: 1.0 mm (customization available)
• Standard models and dimensions: Model A (37 × 26 mm), Model B (35 × 22 mm), Model C (25 × 20 mm)
• Recommended applications: High‑speed optical modules (800G / 1.6T), RF / microwave power and PA, power electronics (IGBT/SiC MOSFET), high power LEDs
• Metallization options: DPC, AMB, thick‑film metallization, thin‑film metallization
• Key benefits: extreme thermal conductivity vs alumina, high volume resistivity and dielectric strength, matched CTE to Si/GaN, high surface precision for chip mounting