Electrical insulating plate AN-170

Product Summary
The 138 × 190 × 0.635 mm aluminum nitride (AlN) substrate AN-170 is a large-format ceramic master sheet engineered for downstream processing into finished electronic substrates. It delivers consistent surface condition, flatness and dimensional tolerances suited to metallization and advanced thick/thin film processes.

Overview
AlN substrates combine high thermal conductivity with electrical insulation and dimensional stability, making them appropriate for power electronics, thermal management assemblies and semiconductor packaging where heat dissipation and electrical isolation are required.

Key Product Highlights

• Panel size: 138 × 190 mm (large-format master sheet)
• Thickness: 0.635 mm
• Controlled surface roughness for metallization and photolithography
• Low warpage and tight lot-to-lot consistency for reliable downstream processing

Applications

• DPC metallization: full-panel sputtering, plating and photolithography
• Thick film processing: screen printing, firing and laser trimming
• Thin film processing: deposition and patterning
• DBC / AMB workflows for power electronic substrate manufacturing
• Precision laser cutting and singulation into custom ceramic substrates

Aluminum Nitride Ceramic Properties (table)
Item: AlN / AN-170
Material: Aluminum Nitride (AlN)
Appearance: Light cyan
Surface Roughness (Ra, μm): 0.1 – 0.75
Density (g/cm³): ≥ 3.3

Physical Properties:
- Bending Strength (Three-Point Bending), MPa: ≥ 400
- Vickers Hardness (Load 4.9), HV0.2: ≥ 1000
- Water Absorption Rate, %: –

Thermal Properties:
- Thermal Conductivity (25°C), W/(m·K): ≥ 170
- Linear Coefficient of Thermal Expansion (25–500°C), ×10⁻⁶/°C: 4 – 6
- Thermal Shock Resistance (800°C), cycles: ≥ 10
- Specific Heat, J/(kg·K): 720

Electrical Properties:
- Dielectric Constant (1 MHz / 25°C): 8 – 9
- Dielectric Loss (1 MHz / 25°C), ×10⁻⁴: ≤ 3
- Volume Resistivity (25°C), Ω·cm: > 1e14
- Breakdown Voltage, kV/mm: > 17

Characteristics / technical specifications

• Model / Grade: AN-170
• Panel size: 138 × 190 mm
• Thickness: 0.635 mm
• Material: Aluminum Nitride (AlN)
• Appearance: Light cyan
• Surface roughness (Ra): 0.1–0.75 μm
• Density: ≥ 3.3 g/cm³
• Bending strength (three-point): ≥ 400 MPa
• Vickers hardness (HV0.2): ≥ 1000
• Thermal conductivity (25°C): ≥ 170 W/(m·K)
• Coefficient of thermal expansion (25–500°C): 4–6 ×10⁻⁶/°C
• Thermal shock resistance (800°C): ≥ 10 cycles
• Specific heat: 720 J/(kg·K)
• Dielectric constant (1 MHz / 25°C): 8–9
• Dielectric loss (1 MHz / 25°C): ≤ 3 ×10⁻⁴
• Volume resistivity (25°C): > 1e14 Ω·cm
• Breakdown voltage: > 17 kV/mm