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STMicroelectronics bipolar transistors
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Current: 24 A
Voltage: 1,700 V
... The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to Horizontal ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel ...
STMicroelectronics
Current: 8 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel ...
STMicroelectronics
Current: 30 A
Voltage: 600 V
... This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Low on-voltage drop (VCE(sat)) Short circuit withstand time 10 μs Low Cres ...
STMicroelectronics
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