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Current: -16.4 A
Voltage: -60 V
... IPD900P06NM is a P-channel power MOSFET designed for switching and power-management applications.
Key ...
Infineon Technologies AG
Voltage: 1,700, 2,500, 4,500 V
... XPT) IGBTs deliver on all counts. Configured as either planar or trench IGBTs, these high-voltage insulated-gate bipolar transistors can be used in parallel. Doing this yields cost savings and simplifies gate drive circuit design. Installing ...
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
... Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high- power HiPak IGBT modules ...
Current: -0.5 A
Voltage: -50 V
... 50A02CH is Bipolar Transistor, Low VCE(sat), PNP Single for low frequency General-Purpose Amplifier Application. Applications Low-Frequency Amplifier High Speed Switching Small Motor Drive Muting Circuit Features High Collector Current ...
Onsemi
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
... switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits driving a vertical power ...
STMicroelectronics
Voltage: 7.5 V
... output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB RoHS ...
Current: 95 A
Voltage: 40 V
... RH6G040BG is a power MOSFET with low-on resistance and High power package, suitable for switching. Low on - resistance High Power small mold Package(HSMT8) Pb-free plating ; RoHS compliant Halogen ...
ROHM Semiconductor
Voltage: -400 V - 1,000 V
... Vishay is the world’s number-one manufacturer of low- power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and thermally advanced ...
Voltage: 0.24 V - 3.5 V
... NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors. ...
Voltage: 110, 265 V
... TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System Cost, Higher ...
Power Integrations
Current: 1 A - 5 A
Voltage: 12 V - 400 V
... Bipolar transistors. By utilizing its wide line up of in-house packaging and superior silicon technology, Diodes is ideally positioned to meet your application needs for Bipolar transistors. Continued Innovation The ...
... pins (2-16) By customizing the arrangement of socket pins, it can also be used for evaluation of power semiconductors such as IPM and IGBT. Possible for Kelvin measurement Able to select the wiring specifications Support ...
JC CHERRY INC.
Voltage: 45 V
... The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier ...
Central Semiconductor
Current: 25 mA
Voltage: 20 V
... Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE ...
Diotec
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity. Avagos ...
Current: 10, 25 A
Voltage: 1,200 V
... Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate using DBC ...
Rongtech Industry (Shanghai) Inc.,
... Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - square Reverse ...
IXYS
Voltage: 8 V - 35 V
... connected with genset controller via RS485. By mobile APP genset information can be obtained and genset start/stop can be controlled. PERFORMANCE AND CHARACTERISTICS Mobile bluetooth can monitor genset ...
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