Enables contact annealing and GaN substrate processing. Supports 6-inch wafers and enables activation and oxidation in vacuum (LP) environments/N2 load-lock atmospheres.
Features
Maximum operating temperature: 1,200°C
Supports a wide range of wafer sizes up to 6 inches.
An automatic wafer replacement mechanism provides cassette-to-cassette transfer.
Vacuum support improves annealing characteristics.
N2 load-lock support enables rapid turnaround time.
Can process GaN substrates.