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Oxidation furnace RLA-1200
annealingbellgas

oxidation furnace
oxidation furnace
oxidation furnace
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Characteristics

Function
oxidation, annealing
Configuration
bell
Heat source
gas
Atmosphere
nitrogen
Other characteristics
for the electronics industry
Maximum temperature

Max.: 1,200 °C
(2,192 °F)

Min.: 400 °C
(752 °F)

Width

1,300 mm
(51.18 in)

Height

1,850 mm
(72.83 in)

Depth

1,300 mm
(51.18 in)

Description

This lamp annealing system for 4-inch to 8-inch wafers achieves high-quality processing even for use in R&D. Activation and oxidation are available in a vacuum (LP) environment and N2 load-lock atmosphere. Features High performance process with R&D Low-cost system by manual susceptor transfer Upper & lower cross lamp structure and soaking furnace improve the uniformity of in-plane temperature 4- to 8-inch wafer size is available Equipped with an operator-friendly high performance control system Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure This lamp annealing system for the R&D of 4-inch to 8-inch wafers saves processing cost thanks to high-speed heating at 200°C/sec and manual susceptor transfer. The structure using the upper and lower cross halogen lamps achieves superior in-plane temperature uniformity, making both low-cost and high-quality processing reality. Thanks to the quartz tube designed to include a vacuum resistant property, processing is available in a clean vacuum (LP) environment and N2 load lock atmosphere.
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.