IGBT transistor RGW40N120F1A
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IGBT transistor
IGBT transistor
IGBT transistor
IGBT transistor
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Characteristics

Type
IGBT
Technology
power
Current

40 A

Voltage

1,200 V

Description

FEATURES •High breakdown voltage to 1200V for improved reliability •Trench-Stop Technology offering : >High speed switching >High ruggedness, temperature stable >LOW VcEsat >Easy parallel switching capability due to positive temperature coefficient in VcEsat • Enhanced avalanche capability APPLICATION •Uninterruptible Power Supplies •Solar inverter •Welding •PFC applications

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