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IGBT transistor RGW40N120T1Bpower
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Characteristics
- Type
- IGBT
- Technology
- power
- Current
40 A
- Voltage
1,200 mV
Description
FEATURES
•High breakdown voltage to 1200V for improved reliability
•Trench-Stop Technology offering :
>very tight parameter distribution
>high ruggedness, temperature stable behavior
>Short circuit withstand time - 1 Ops
>High ruggedness, temperature stable
>Low VcE(SAT)
>Easy parallel switching capability due to positive temperature coefficient in
VcE(SAT)
•Enhanced avalanche capability
APPLICATION
• Frequency Converters
• Motor Drive
Catalogs
Other Rongtech Industry (Shanghai) Inc., products
Discrete IGBT & Module power semi conductors
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.