IGBT transistor module RTU150HF120FA2
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IGBT transistor module
IGBT transistor module
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Characteristics

Type
IGBT
Technology
power
Current

150 A

Voltage

1,200 V

Description

Features: • 1200V150A, VCE(sat)(typ. )=3.0V •Ultrafast switching speed •Excellent short circuit ruggedness •62mm half bridge module General Applications: Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications

Catalogs

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.