Hall effect measurement system DX-1000T

concentricityresistivityfor semiconductors

This instrument system consists of: electromagnet, electromagnet power supply, high-precision constant current source high-precision voltmeter, Gauss meter, Hall effect sample holder, standard sample, high and low temperature Dewar, temperature controller, and system software. Testable materials: - Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe and ferrite materials, etc.; - Low impedance materials: graphene, metals, transparent oxides, weakly magnetic semiconductor materials, TMR materials, etc.; - High resistance materials: semi-insulating GaAs, GaN, CdTe, etc. Technical indicators - Magnetic field: 10mm pitch is 2T, 30mm pitch is 1T; - Sample current: 0.05uA~50mA (adjust 0.1nA); - Measuring voltage: 0.1uV~30V; - Provide various test standard materials, silicon and gallium arsenide of various levels (different sensitivity and precision); - Minimum resolution: 0.1GS; - Magnetic field range: 0-1T; - Cooperate with gauss meter or digital acquisition board to communicate with computer; - I-V curve and I-R curve measurement, etc.; - Change curves of parameters such as Hall coefficient and carrier concentration with temperature; - Resistivity range: 10-7~1012 Ohm*cm; - Resistance range: 10 m Ohms~ 6MOhms; - Carrier concentration: 103~1023cm-3; - Mobility: 0.1~108cm2/volt*sec; - Temperature adjustment 0.1K; - Temperature zone: 77K-470K; - Fully automated testing, one-key processing; - Continuous measurement between the same temperature difference can be realized. Parameters of each component: High precision electromagnet - Pole diameter 100mm;