Ceramic substrate

for the electronics industryfor power electronicsaluminum nitride

Customized ceramic substrates from INNOVACERA serve as foundational materials for power electronics, semiconductor packaging and microelectronics, providing mechanical support, electrical interconnects and thermal management for electronic components.

Materials and applications

• 96% Alumina (Al₂O₃): Low warpage, high thermal shock and chemical resistance, excellent processability. Applications: thick/thin-film chip resistors, low-power LEDs, energy storage and charging station substrates.
• Aluminum Nitride (AlN): High thermal conductivity, high breakdown voltage, CTE close to silicon wafers. Applications: heat sinks, high-power IGBT modules, high-power LEDs.
• Zirconia Toughened Alumina (ZTA): High strength and reflectivity, strong thermal shock resistance, good processability. Applications: medium-power power modules, medium-power LEDs, precision instruments.
• Silicon Nitride (Si₃N₄): High thermal conductivity, high strength and toughness, CTE close to silicon wafers. Applications: high-power IGBT modules, high-power heat sinks, wireless modules.

Technological advantages across the value chain

• Independent, controllable high-purity powder to ensure batch consistency and stable thermal/mechanical properties.
• Multiple forming processes available (tape casting, dry pressing, isostatic pressing) to meet shape, size and performance requirements for precision parts.
• Precision machining: laser processing, grinding and polishing to achieve micron-level dimensional accuracy and ultra-low surface roughness (Ra can reach nanometer level).
• Strong R&D and customization capabilities with more than 40 patents, enabling tailored substrates with specific thicknesses and performance parameters.
• Comprehensive quality management: IATF16949 automotive-quality certification and full-process control with precision testing and analysis instruments.

Specifications and dimensions

• Unit: mm
• Effective size (A, B): Al₂O₃: 50.8–190; ZTA: 50.8–190; AlN: 50.8–190; Si₃N₄: 138 × 190
• Thickness (T): Al₂O₃: 0.25–1.5; ZTA: 0.25–1.5; AlN: 0.25–1.0; Si₃N₄: 0.25, 0.32
• Thickness tolerance: ±5% (Min ±0.03 mm) — all materials
• Warp (C): ≤0.3% — all materials
• Surface roughness (μm): Al₂O₃: 0.2–0.6; ZTA: 0.2–0.5; AlN: 0.2–0.75; Si₃N₄: 0.2–0.75
• Customizable in size, thickness and surface roughness

Technical specifications

• Materials offered: 96% alumina (Al₂O₃), aluminum nitride (AlN), zirconia toughened alumina (ZTA), silicon nitride (Si₃N₄).
• Precision processing: micron-level dimensional control and capability to reach nanometer-level surface Ra via advanced grinding and polishing.
• Manufacturing processes: tape casting, dry pressing, isostatic pressing and bespoke forming for complex shapes.
• R&D & customization: >40 patents and ability to tune thickness and electrical/thermal performance to customer requirements.
• Quality & certification: full-process quality control and IATF16949 certification; equipped with precision testing and analysis instruments.