Field-effect transistor PDHS545-NB195-S03-RA
IGBTtrench IGBTpower

Field-effect transistor - PDHS545-NB195-S03-RA - JC CHERRY INC. - IGBT / trench IGBT / power
Field-effect transistor - PDHS545-NB195-S03-RA - JC CHERRY INC. - IGBT / trench IGBT / power
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Characteristics

Type
IGBT, trench IGBT, field-effect
Technology
power

Description

High Current Dvice Socket High Temperature ℃ 5.45mm Pitch Right Angle Low Outgassing This is a socket that can correspond to PC Board arrangement with height restrictions by turning the device sideways. ● Supports various packages and supports high temperature environments. ● Can be used for various purposes such as measurement evaluation, inspection, and mounting. ● A highly reliable round pin socket is used for the contact part. TO-3、TO-247、TO-264 etc. Dielectric Strength - Insulation Resistance - Sleeve - Brass, Au Plating over Ni Contact - High Temperature Copper Alloy, Au Plating over Ni Insulator - High Temp, Thermoplastic * When installing the heat sink on the back of the PC Board or device, please pay attention to the position and dimensions. ** If you mount the socket by itself, it will be thinner than the device, so be careful. Set the device to be used, heat sink, etc., and then adjust the height before mounting *** The heatsink can also be mounted with the backside of the device (Heat dissipation side) facing up.

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