Operational amplifier LM358

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Overview
The LM358 is a dual operational amplifier providing two channels with unity‑gain stability and a wide supply range for general-purpose industrial and embedded applications. Next-generation variants (LM358B, LM2904B/BA) deliver lower offset, reduced quiescent current and integrated EMI/RF filtering for improved performance.

Key description
The LM358 family features a common‑mode input range that includes ground, low input offset and good differential-input tolerance. Typical unity‑gain bandwidth is ~0.7 MHz; B/BA variants increase bandwidth and reduce quiescent current. Devices are suitable for cost‑sensitive and rugged environments where ESD robustness and EMI immunity are required.

Features

• Supply voltage range: 3 V to 30 V (up to 36 V for some B/BA variants)
• Quiescent current: ~300–350 µA per channel (typical, variant dependent)
• Unity‑gain bandwidth: ~0.7 MHz (LM358); ~1.2 MHz (LM358B/BA)
• Common‑mode input range includes ground (enables sensing near 0 V)
• Low input offset: down to 2–3 mV (variant dependent)
• Integrated RF/EMI filters and increased ESD protection on B/BA variants

Data sheet
Refer to the "Industry‑Standard Dual Operational Amplifiers" datasheet (Rev. AB) for full electrical characteristics, pinouts and application guidance.

Packages and media

• Common packages: PDIP, SOIC, SOP, TSSOP, VSSOP, SOT23‑8
• Functional block diagram and package drawings available

Description (detailed)
LM358B/LM2904B variants introduce improvements such as lower typical offset (≈300 µV typical quoted for B/BA), reduced quiescent current (~300 µA per amplifier), higher ESD robustness (e.g., 2 kV HBM for some variants) and integrated EMI/RF filtering to support use in harsher environments and space‑constrained designs.

Characteristics / technical specifications

• Number of channels: 2
• Total supply voltage (max): 30 V
• Total supply voltage (min): 3 V
• Rail-to-rail: input to V− (common‑mode includes ground)
• GBW (typ): 0.7 MHz (LM358); ~1.2 MHz (B/BA)
• Slew rate (typ): 0.3 V/µs
• Vos (max at 25 °C): up to 7 mV (catalog); 3 mV (A/B); 2 mV (BA)
• Iq per channel (typ): 0.35 mA (typ); ~0.3 mA for B/BA
• Vn at 1 kHz (typ): 40 nV/√Hz
• Operating temperature range: 0 to 70 °C
• CMRR (typ): 80 dB
• Iout (typ): 30 mA
• Architecture: Bipolar
• Representative packages: PDIP (8 pin), SOIC (8 pin), SOP, TSSOP, VSSOP, SOT23‑8