Phograin microchips

This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance ...

This 25Gbps photodiode chip, which is top-illuminated high data rate PIN photodiode chip, with active area is Φ32μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination with high performance ...

This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. ...

This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. ...

This 25Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal (GS) electrode structure, with top-illuminated active area size is Φ16μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature coefficient ...

The XSJ-10-EMPD-120L is a side illuminated InGaAs InP PIN monitoring photodetector chip with a planar structure. The anode and cathode are on the front, and the chip side detection window is 120umX60um, suitable for data centers and telecommunications ...

This Edge-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and double cathode on top. Edge detectable area size is 100μmX80μm, and higher responsivity in the wavelength region from 980nm to ...

This 56GBaud photodiode chip, which is top-illuminated and mesa structure high data rate PIN photodiode chip, active area size is Φ16μm. Its features have high responsivity, low capacitance, low dark current and excellent reliability, mainly combination ...

The XSJ-10-EMPD-120R is an edge-illuminated InGaAs/InP monitor PIN photodiode chip, which is planar structure with anode contact and cathode contact on top. The photodiode edge detectable area size is 120μmX60μm, which suitable for edge emitting lasers ...

... Description The XSJ-10-EMPD-120RB is a side illuminated InGaAs InP PIN monitoring photodetector chip with a planar structure. The anode and cathode are metallized on the front and back, and the chip side detection window is 120umX60um. It is suitable ...