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ROHM Semiconductor power transistors
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Voltage: 1,700, 2,500, 4,500 V
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching ...
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio frequency (RF) and power supply devices.
Current: -16.4 A
Voltage: -60 V
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, ...
Infineon Technologies AG
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT ...
Current: 5 A
Voltage: 500 V
Power Transistor Sockets 5.45mm / 0.215" Pitch High Temperature Low Outgassing High reliability round contact providing good electrical and mechanical performance. Power Transistor ...
Current: 5 A
Power Transistor Sockets For TO-247(4pin) High Temp. ℃ Low Outgassing This Power Transistor Test Sockets accommodates the TO-247(4pin) package and can be used in ...
Current: 5 A
Power Transistor Test Sockets,Custom Pitch High Current Pitch Standard Type/Through Hole Type Low Outgassing If you want to evaluate a device that is not supported by the standard specifications, ...
Voltage: 110, 265 V
TOPSwitch-HX incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Lower System ...
Power Integrations
... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced ...
Current: 20 A
Voltage: 650 V
... has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and ...
ROHM Semiconductor
Automotive photocouplers (transistor output, IC output) are available in small packages with high dielectric strength (3.75KV) and high-temperature operation up to 135 °C. This facilitates customer design, including safety ...
Voltage: 7.5 V
... output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: ...
Current: -0.5 A
Voltage: -50 V
50A02CH is Bipolar Transistor, Low VCE(sat), PNP Single for low frequency General-Purpose Amplifier Application. Applications Low-Frequency Amplifier High Speed Switching Small Motor Drive Muting Circuit Features High ...
Fairchild Semiconductor
Current: 0.4 A - 45 A
Voltage: 36 V - 70 V
... switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and protection circuits driving a vertical ...
STMicroelectronics
Voltage: -400 V - 1,000 V
Vishay is the world’s number-one manufacturer of low-power MOSFETs. The Vishay Siliconix power MOSFET product line includes devices in more than 30 package types, including the chipscale MICRO FOOT® and ...
Voltage: 0.24 V - 3.5 V
NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.
Voltage: 45 V
The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current ...
Central Semiconductor
Current: 1 A - 5 A
Voltage: 12 V - 400 V
... Bipolar transistors. By utilizing its wide line up of in-house packaging and superior silicon technology, Diodes is ideally positioned to meet your application needs for Bipolar transistors. Continued ...
Current: 25 mA
Voltage: 20 V
Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - ...
Diotec
Current: 10, 25 A
Voltage: 1,200 V
Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate ...
Rongtech Industry (Shanghai) Inc.,
Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged eXtreme-light Punch Through (XPT™) design results in: - short circuit rated for 10µs. - very low gate charge - low EMI - ...
IXYS
Voltage: 8 V - 35 V
... From mobile genset controller power can be controlled or genset controller can be awaken up; Wide supply range DC (8~35)V, which can directly use the start battery self-contained in the engine; Module ...
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