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  1. Electricity - Electronics
  2. Electronic Component
  3. MOSFET gate driver
  4. ROHM Semiconductor

MOSFET gate driver BD2320EFJ-LA
IGBT

MOSFET gate driver - BD2320EFJ-LA - ROHM Semiconductor - IGBT
MOSFET gate driver - BD2320EFJ-LA - ROHM Semiconductor - IGBT
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MOSFET, IGBT

Description

This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side. Long Time Support Product for Industrial Applications. Under Voltage Lockout (UVLO) for High-Side and Low-Side Driver 3.3 V and 5.0 V Interface Voltage Output In-phase with Input Signal

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Exhibitions

Meet this supplier at the following exhibition(s):

ELECTRONICA 2026
ELECTRONICA 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

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