- Electricity - Electronics
- Electronic Component
- MOSFET gate driver
- ROHM Semiconductor
MOSFET gate driver BD2320EFJ-LAIGBT
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Characteristics
- Options
- MOSFET, IGBT
Description
This is the product guarantees long time support in industrial market. BD2320EFJ-LA is the 100V maximum voltage High-Side and Low-Side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side.
Long Time Support Product for Industrial Applications.
Under Voltage Lockout (UVLO) for High-Side and Low-Side Driver
3.3 V and 5.0 V Interface Voltage
Output In-phase with Input Signal
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