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Voltage: 1,700, 2,500, 4,500 V
... Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks ...
Current: 600 A
Voltage: 1,200 V
... Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio of IGBT ...
Current: 28 A
Voltage: 650 V
... Hard-switching TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity ...
Infineon Technologies AG
Current: 15 A
Voltage: 140 V
... NPN Bipolar Power Transistor The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features High Safe Operating Area ...
Onsemi
Current: 150 A - 3,600 A
Voltage: 1,200, 1,700, 3,300, 4,500, 6,500 V
... Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low losses combined ...
Current: 24 A
Voltage: 1,700 V
... The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to Horizontal ...
STMicroelectronics
Current: 20 A
Voltage: 650 V
... Switching loss reduced, enabling high-speed switching . (2-pin package) AEC-Q101 qualified Shorter recovery time High-speed switching possible Reduced temperature dependence ...
ROHM Semiconductor
... designs HousingMiniSKiiP II 1 (42x40x16) (LLxBBxHH)42x40x16 SwitchesSeven Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast) ...
SEMIKRON
Voltage: 0.24 V - 3.5 V
... NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors. ...
... High Current Dvice Socket High Temperature ℃ 5.45mm Pitch Right Angle Low Outgassing This is a socket that can correspond to PC Board arrangement with height restrictions by turning the device sideways. ● Supports various packages and supports ...
JC CHERRY INC.
Voltage: 60 V
... The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: ...
Central Semiconductor
Current: 0.8 A
Voltage: 50 V
... DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 20, 50 V
... N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen ...
Diodes Incorporated
Current: 25 mA
Voltage: 20 V
... Collector Emitter Voltage - Vceo 20 V DC Collector Current - Ic - 25 mA Polarity - pol - NPN Power Dissipation - Ptot - 0.200 W Junction Temperature - Tjmax - 150 °C DC Current Gain - hfe - 85 - VcE - 10V - Ic - 7 mA Collector Saturation Voltage - VcEsat ...
Diotec
Current: 150 A
Voltage: 600 V
... VCES – 600V. Switches – Half Bridge. IGBT Modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment. The IGBT modules (Insulated Gate Bipolar ...
Current: 10, 25 A
Voltage: 1,200 V
... Features •Trench + Filed Stop IGBT technology •10ps short circuit capability •Versât) with positive temperature coefficient •Low inductance case •Fast & soft reverse recovery anti-parallel FWD •Isolated copper baseplate using DBC ...
Rongtech Industry (Shanghai) Inc.,
... Features: Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square ...
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