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... R6024WNJ2 is a 600 V N‑channel PrestoMOS™ Super Junction MOSFET in a low‑profile surface‑mount TOLL package. It offers low on‑resistance and fast reverse recovery (trr), making it suitable for high power‑density ...
ROHM Semiconductor
... a 600V Super Junction N‑channel power MOSFET optimized for high‑ speed switching applications. It combines low on‑resistance and fast switching in a compact TOLL surface‑mount package ...
ROHM Semiconductor
... R6035WNJ2 is a 600V PrestoMOS™ Super Junction N-channel MOSFET in a low-profile TOLL (MO-299) surface-mount package. It combines low on-resistance and fast switching/recovery characteristics for high-density ...
ROHM Semiconductor
... Overview
This is a 600V,
high-
speed switching N-channel Super Junction
MOSFET in a low-profile surface-mount TOLL (MO-299) package. It offers low RDS(on), improved admittance compared with previous ...
ROHM Semiconductor
... Overview
R6038XNJ2 is a
high-
speed switching N‑channel 600V Super Junction power
MOSFET offering low on-resistance and
fast switching
performance in a compact ...
ROHM Semiconductor
... Overview
The R6020XNJ2 is a
high-
speed switching 600V Super Junction
MOSFET in a low-profile TOLL surface-mount package. It offers low on-resistance and improved admittance characteristics versus ...
ROHM Semiconductor
... Overview
This SiC
MOSFET in a TSC3PAK surface-mount package features a top-side heat dissipation structure that places the thermal surface on the package top, enabling automated PCB mounting while delivering thermal
performance ...
ROHM Semiconductor
... Overview
This SiC
MOSFET SCT4062KTWHR in TSC3PAK is designed for
high‑voltage power conversion and switching applications. The device combines low ON resistance and
fast switching to reduce ...
ROHM Semiconductor
... >Server power supplies and industrial
high-efficiency power equipment
Additional information
Part of ROHM's 4th Generation (Trench) SiC
MOSFET family delivering low Rds(on) and
high-
speed ...
ROHM Semiconductor
... peak voltage of 1200 V under Pollution Degree 2. The device uses ROHM's 4th Generation (Trench) SiC MOSFET technology to achieve low Rds(on) and high- speed switching, reducing switching losses and improving ...
ROHM Semiconductor
... oxide lifetime and industry-leading avalanche and short-circuit
performance to improve system reliability and uptime.
High-Performance Discrete SiC MOSFETs
Our mSiC®
MOSFET ...
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