High-voltage resistance MOSFET SCT4062KTW
high-speedfor automotive applicationsSiC

High-voltage resistance MOSFET - SCT4062KTW - ROHM Semiconductor - high-speed / for automotive applications / SiC
High-voltage resistance MOSFET - SCT4062KTW - ROHM Semiconductor - high-speed / for automotive applications / SiC
High-voltage resistance MOSFET - SCT4062KTW - ROHM Semiconductor - high-speed / for automotive applications / SiC - image - 2
Add to favorites
Compare this product

Characteristics

Options
high-voltage resistance, high-speed, for automotive applications, SiC
Material
silicon carbide

Description

Overview
This SiC MOSFET is supplied in the TSC3PAK surface-mount package featuring a top-side heat-dissipation surface and a proprietary groove to secure a creepage distance of 6.66 mm. The device supports an AC peak voltage of 1200 V in Pollution Degree 2 environments, delivers low on-resistance and high-speed switching, and is optimized for high-efficiency power conversion in industrial applications.

Key features
  • Wide creepage distance: min. 6.66 mm
  • Low drain-source on-state resistance (Typ. 62 mΩ)
  • Fast switching and fast reverse recovery
  • Easy to parallel and simple to drive
  • Top-side heat dissipation compatible with automated SMT
  • Pb-free lead plating; RoHS compliant


Package & Thermal
TSC3PAK surface-mount package with top-side heat-dissipation surface achieves heat removal comparable to conventional through-hole packages (TO-247 class) while enabling automated SMT assembly. The groove structure improves creepage distance and insulation reliability for high-voltage systems.

Applications
  • Onboard chargers (OBC) and electric compressors in xEVs (see note on automotive use)
  • PV inverters and renewable-energy converters
  • Server power supplies and industrial high-efficiency power equipment


Additional information
Part of ROHM's 4th Generation (Trench) SiC MOSFET family delivering low Rds(on) and high-speed switching to reduce switching losses. Important note: this product is STANDARD GRADE and is not recommended for use in automotive (safety-critical) systems.

Technical specifications
  • Part Number: SCT4062KTWTCR
  • Commercial model name: SCT4062KTW
  • Status: Recommended
  • Package: TSC3PAK
  • Packing Type: Taping
  • Unit Quantity (per reel): 600
  • Minimum Package Quantity: 600
  • RoHS: Yes
  • MSL: 1
  • Drain-Source Voltage (V): 1200 V
  • Drain-Source On-state Resistance (Typ.): 62 mΩ
  • Generation: 4th Gen (Trench)
  • Drain Current (A): 25 A
  • Total Power Dissipation (W): 106 W
  • Junction Temperature (Max.) (°C): 175 °C
  • Storage Temperature Range (°C): -40 to 175
  • Package Size (mm): 14.0 x 18.58 (t = 3.625)

Catalogs

No catalogs are available for this product.

See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
    About DirectIndustry
    DirectIndustry is a marketplace that offers B2B players a complete experience, from product sourcing to purchase. DirectIndustry is an entity of VirtualExpo Group.