OverviewThis SiC MOSFET is supplied in the TSC3PAK surface-mount package featuring a top-side heat-dissipation surface and a proprietary groove to secure a creepage distance of 6.66 mm. The device supports an AC peak voltage of 1200 V in Pollution Degree 2 environments, delivers low on-resistance and high-speed switching, and is optimized for high-efficiency power conversion in industrial applications.
Key features- Wide creepage distance: min. 6.66 mm
- Low drain-source on-state resistance (Typ. 62 mΩ)
- Fast switching and fast reverse recovery
- Easy to parallel and simple to drive
- Top-side heat dissipation compatible with automated SMT
- Pb-free lead plating; RoHS compliant
Package & ThermalTSC3PAK surface-mount package with top-side heat-dissipation surface achieves heat removal comparable to conventional through-hole packages (TO-247 class) while enabling automated SMT assembly. The groove structure improves creepage distance and insulation reliability for high-voltage systems.
Applications- Onboard chargers (OBC) and electric compressors in xEVs (see note on automotive use)
- PV inverters and renewable-energy converters
- Server power supplies and industrial high-efficiency power equipment
Additional informationPart of ROHM's 4th Generation (Trench) SiC MOSFET family delivering low Rds(on) and high-speed switching to reduce switching losses. Important note: this product is STANDARD GRADE and is not recommended for use in automotive (safety-critical) systems.
Technical specifications- Part Number: SCT4062KTWTCR
- Commercial model name: SCT4062KTW
- Status: Recommended
- Package: TSC3PAK
- Packing Type: Taping
- Unit Quantity (per reel): 600
- Minimum Package Quantity: 600
- RoHS: Yes
- MSL: 1
- Drain-Source Voltage (V): 1200 V
- Drain-Source On-state Resistance (Typ.): 62 mΩ
- Generation: 4th Gen (Trench)
- Drain Current (A): 25 A
- Total Power Dissipation (W): 106 W
- Junction Temperature (Max.) (°C): 175 °C
- Storage Temperature Range (°C): -40 to 175
- Package Size (mm): 14.0 x 18.58 (t = 3.625)