MOSFET for automotive applications SCT4065DTWHR
SiCsilicon carbidehigh-speed

MOSFET for automotive applications - SCT4065DTWHR - ROHM Semiconductor - SiC / silicon carbide / high-speed
MOSFET for automotive applications - SCT4065DTWHR - ROHM Semiconductor - SiC / silicon carbide / high-speed
MOSFET for automotive applications - SCT4065DTWHR - ROHM Semiconductor - SiC / silicon carbide / high-speed - image - 2
Add to favorites
Compare this product

Characteristics

Options
for automotive applications, SiC, silicon carbide, high-speed, high-voltage resistance
Material
SiC

Description

Overview
The SCT4065DTWHR is a SiC MOSFET in the TSC3PAK surface-mount package designed for high-voltage power conversion. The package uses a top-side heat dissipation structure that places the heat-sink surface on the package top, enabling automated board mounting while delivering thermal performance comparable to through-hole packages. ROHM's proprietary groove design secures a creepage distance of 6.66 mm, supporting AC peak voltages up to 1200 V in Pollution Degree 2 environments. The device features low ON resistance and fast switching to reduce switching losses and improve converter efficiency and reliability, making it suitable for automotive and industrial high-voltage applications.

Key Features
  • AEC-Q101 qualified (automotive grade)
  • Wide creepage distance: min. 6.66 mm (supports 1200 V AC peak in Pollution Degree 2)
  • Low drain-source ON-resistance (RDS(on) typ. 65 mΩ)
  • Fast switching and reduced switching losses
  • Fast reverse recovery
  • Easy paralleling for higher current capacity
  • Simple gate drive requirements
  • Pb-free lead plating; RoHS compliant


Package & Mechanical Highlights
  • TSC3PAK surface-mount package with top-side heat dissipation provides thermal performance comparable to through-hole packages while allowing automated assembly
  • ROHM groove structure secures creepage distance (6.66 mm) for improved insulation design in high-voltage systems
  • Package dimensions optimized for high thermal performance and space-saving surface-mount layouts (14.0 × 18.58 mm, t ≈ 3.625 mm)


Applications
  • Automotive: onboard chargers (OBC), electric compressors
  • PV inverters and renewable energy converters
  • High-performance server and telecom power supplies


Technical specifications
  • Part Number: SCT4065DTWHRTCR
  • Model: SCT4065DTWHR
  • Brand: ROHM
  • Drain-Source Voltage (Vds): 750 V
  • Drain-Source On-state Resistance (Typ.): 65 mΩ
  • Generation: 4th Gen (Trench)
  • Drain Current (Id): 24 A
  • Total Power Dissipation: 81 W
  • Junction Temperature (Max.): 175 °C
  • Storage Temperature Range: -40 to 175 °C
  • Package: TSC3PAK (surface-mount with top-side heat-sink)
  • Package Size: 14.0 x 18.58 mm (t = 3.625 mm)
  • Packing Type: Taping
  • Unit Quantity: 600 (minimum package quantity: 600)
  • RoHS: Yes
  • MSL: 1

Catalogs

No catalogs are available for this product.

See all of ROHM Semiconductor‘s catalogs

Exhibitions

Meet this supplier at the following exhibition(s):

electronica Munich 2026
electronica Munich 2026

10-13 Nov 2026 Munich (Germany) Hall C3 - Stand 520

  • More information

    Other ROHM Semiconductor products

    Silicon-carbide (SiC) Power Devices

    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.
    About DirectIndustry
    DirectIndustry is a marketplace that offers B2B players a complete experience, from product sourcing to purchase. DirectIndustry is an entity of VirtualExpo Group.