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MOSFET transistor module SCT2H12NYswitchingpowersilicon
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Characteristics
- Type
- MOSFET
- Technology
- switching, power
- Other characteristics
- silicon
- Current
4 A
- Voltage
1,700 V
Description
N-channel SiC (Silicon Carbide) power MOSFET.
Low on-resistance
Fast switching speed
Long creepage distance with no center lead
Simple to drive
Pb-free lead plating; RoHS compliant
Catalogs
Industrial Motor Solutions
40 Pages
Short Form Catalog
308 Pages
Other ROHM Semiconductor products
Silicon-carbide (SiC) Power Devices
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.